MoOx thin films deposition by reactive RF-magnetron sputtering

Abstract

Sub-stoichiometric molybdenum oxide (MoOx, x < 3) thin films are deposited and analyzed to find optimum parameters for its use in heterojunction solar-cells. Deposition is done on n-type crystalline silicon wafer and glass substrates by reactive RF-magnetron sputtering. Oxygen partial pressure and deposition pressure are the two parameters used to vary stoichiometry inflluencing other characteristics. Stoichiometric composition, thickness, electrical properties and optical response have been studied to characterize the deposited thin films. MoOx, as other transition metal oxides, on the n-type silicon wafer act as a hole-selective layer. It is a good way of providing a p+-n junction without using dopant.