Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments

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dc.contributor.authorKail, F.
dc.contributor.authorFarjas Silva, Jordi
dc.contributor.authorRoura Grabulosa, Pere
dc.contributor.authorSecouard, C.
dc.contributor.authorNos Aguilà, Oriol
dc.contributor.authorBertomeu i Balagueró, Joan
dc.contributor.authorAlzina Sureda, Francesc
dc.contributor.authorRoca i Cabarrocas, P. (Pere)
dc.date.accessioned2013-04-19T10:51:54Z
dc.date.available2013-04-19T10:51:54Z
dc.date.issued2010
dc.date.updated2013-04-19T10:51:54Z
dc.description.abstractThe structural relaxation of pure amorphous silicon a-Si and hydrogenated amorphous silicon a-Si:H materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon.
dc.format.extent3 p.
dc.format.mimetypeapplication/pdf
dc.identifier.idgrec579121
dc.identifier.issn0003-6951
dc.identifier.urihttps://hdl.handle.net/2445/34662
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.relation.isformatofReproducció del document publicat a: http://dx.doi.org/10.1063/1.3464961
dc.relation.ispartofApplied Physics Letters, 2010, vol. 97, num. 3, p. 031918-1-031918-3
dc.relation.urihttp://dx.doi.org/10.1063/1.3464961
dc.rights(c) American Institute of Physics , 2010
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.sourceArticles publicats en revistes (Física Aplicada)
dc.subject.classificationSemiconductors amorfs
dc.subject.classificationCalorimetria
dc.subject.classificationHidrogen
dc.subject.classificationSilici
dc.subject.classificationEspectroscòpia Raman
dc.subject.otherAmorphous semiconductors
dc.subject.otherCalorimetry
dc.subject.otherHydrogen
dc.subject.otherSilicon
dc.subject.otherRaman spectroscopy
dc.titleRelaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/publishedVersion

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