| Issue Date | Title | Author(s) |
| 22-Jan-2019 | A Point-of-Care Device for Molecular Diagnosis Based on CMOS SPAD Detectors with Integrated Microfluidics | Canals Gil, Joan; Franch Masdeu, Nil; Alonso Casanovas, Oscar; Vilà i Arbonès, Anna Maria; Diéguez Barrientos, Àngel |
| 6-Jul-2019 | Confinement-controlled rectification in a geometric nanofluidic diode | Dal Cengio, Sara; Pagonabarraga Mora, Ignacio |
| 1-Oct-1976 | Contribución al estudio de la influencia de los centros profundos en los diodos Schottky | Esteve Pujol, Joan |
| 1998 | Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach | Gomila Lluch, Gabriel; Bulashenko, Oleg; Rubí Capaceti, José Miguel; Kochelap, V. A. (Viacheslav Aleksandrovich) |
| 2012 | A gated single-photon avalanche diode array fabricated in a conventional CMOS process for triggered systems | Vilella Figueras, Eva; Diéguez Barrientos, Àngel |
| 2000 | Impedance field and noise of submicrometer n+ nn+ diodes: analytical approach | Bulashenko, Oleg; Gaubert, P.; Varani, L.; Vaissiere, J. C.; Nougier, J. P. |
| 9-Sep-2013 | Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices | Berencén Ramírez, Yonder Antonio; Wutzler, R.; Rebohle, L.; Hiller, Daniel; Ramírez Ramírez, Joan Manel; Rodríguez, J. A.; Skorupa, Wolfgang; Garrido Fernández, Blas |
| 1998 | Local noise analysis of a Schottky contact: combined thermionic-emissiondiffusion theory | Gomila Lluch, Gabriel; Bulashenko, Oleg; Rubí Capaceti, José Miguel |
| 1997 | Relation for the nonequilibrium population of the interface states: effects on the bias dependence of the ideality factors | Gomila Lluch, Gabriel; Rubí Capaceti, José Miguel |
