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Issue Date | Title | Author(s) |
---|---|---|
1998 | Local noise analysis of a Schottky contact: combined thermionic-emissiondiffusion theory | Gomila Lluch, Gabriel; Bulashenko, Oleg; Rubí Capaceti, José Miguel |
1998 | Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach | Gomila Lluch, Gabriel; Bulashenko, Oleg; Rubí Capaceti, José Miguel; Kochelap, V. A. (Viacheslav Aleksandrovich) |
1998 | Gas identification with tin oxide sensor array and self-organizing maps: adaptive correction of sensor drifts | Marco Colás, Santiago; Ortega Mansilla, Arturo; Pardo Martínez, Antonio; Samitier i Martí, Josep |
1998 | Nonlinear inverse dynamic models of gas sensing systems based on chemical sensor arrays for quantitative measurements | Pardo Martínez, Antonio; Marco Colás, Santiago; Samitier i Martí, Josep |
1998 | Strain-induced quenching of optical transitions in capped self-assembled quantum dot structures | Prieto, J. A.; Armelles Reig, G.; Utzmeier, Thomas; Briones Fernández-Pola, Fernando; Ferrer, J. C.; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
1998 | Stochastic resonance in noisy nondynamical systems | Vilar, J. M. G. (José M. G.), 1972-; Gomila Lluch, Gabriel; Rubí Capaceti, José Miguel |
1998 | A current-mode interface circuit for a piezoresistive pressure sensor | Samitier i Martí, Josep; Puig i Vidal, Manuel; Bota Ferragut, Sebastián Antonio; Rubio, Carles; Siskos, Stilianos K.; Laopoulos, Theordore |
1-Jun-1998 | Effects of prior hydrogenation on the structure and properties of thermally nanocrystallized silicon layers | Achiq, Abdellatif; Rizk, Richard; Gourbilleau, Fabrice; Madelon, R.; Garrido Fernández, Blas; Pérez Rodríguez, Alejandro; Morante i Lleonart, Joan Ramon |
15-Jun-1998 | Surface roughness in InGaAs Channels of HEMT devices depending on the growth temperature: strain induced or due to alloy decomposition | Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Beck, M.; Py, M. A. |
1-Aug-1998 | Electrically active point defects in n-type 4H¿SiC | Doyle, J. P.; Linnarsson, M. K.; Pellegrino, Paolo; Keskitalo, N.; Svensson, Bengt G.; Schoner, A.; Nordell, N.; Lindstrom, J. L. |
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