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Results 1-10 of 36 (Search time: 0.144 seconds).
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Issue DateTitleAuthor(s)
1998Local noise analysis of a Schottky contact: combined thermionic-emissiondiffusion theoryGomila Lluch, Gabriel; Bulashenko, Oleg; Rubí Capaceti, José Miguel
1997Relation for the nonequilibrium population of the interface states: effects on the bias dependence of the ideality factorsGomila Lluch, Gabriel; Rubí Capaceti, José Miguel
1998Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approachGomila Lluch, Gabriel; Bulashenko, Oleg; Rubí Capaceti, José Miguel; Kochelap, V. A.(Viacheslav Aleksandrovich)
1-Jul-1997Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layersRoura Grabulosa, Pere; Vilà i Arbonès, Anna Maria; Bosch Estrada, José; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Westwood, David I.
15-May-1995Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InPPeiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
Jan-2001Microstructure and secondary phases in coevaporated CuInS2 films: Dependence on growth temperature and chemical compositionÁlvarez García, Jacobo; Pérez Rodríguez, Alejandro; Romano Rodríguez, Alberto; Morante i Lleonart, Joan Ramon; Calvo Barrio, Lorenzo; Scheer, Roderich; Klenk, R.
1992X-ray photoelectron spectroscopy analysis of ion¿beam¿induced oxidation of GaAs and AlGaAsAlay, Josep Lluís; Vandervorst, Wilfried
Jul-1994Modifications in the Si valence band after ion-beam-induced oxidationAlay, Josep Lluís; Vandervorst, Wilfried
2010Structural and optical properties of dilute InAsN grown by molecular beam epitaxyIbáñez i Insa, Jordi; Oliva Vidal, Robert; Mare, M. de la; Schmidbauer, M.; Hernández Márquez, Sergi; Pellegrino, Paolo; Scurr, D. J.; Cuscó i Cornet, Ramon; Artús i Surroca, Lluís; Shafi, M.; Mari, R. H.; Henini, M.; Zhuang, Q.; Godenir, A.; Krier, A.
2011High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxyGacevic, Zarko; Fernández-Garrido, S.; Rebled, J. M. (José Manuel); Estradé Albiol, Sònia; Peiró Martínez, Francisca; Calleja Pardo, Enrique