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| Issue Date | Title | Author(s) |
|---|---|---|
| 1-Jul-1997 | Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers | Roura Grabulosa, Pere; Vilà i Arbonès, Anna Maria; Bosch Estrada, José; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Westwood, David I. |
| 15-May-1995 | Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InP | Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
| 1992 | Composition modulation and inhomogeneous strain field in InxGa1-xAs/InP strained layers | Roura Grabulosa, Pere; Bosch Estrada, José; Morante i Lleonart, Joan Ramon |
| 1992 | Time-resolved measurements on 2T2 -> 2E photoluminescence of Ti3+ in GaP | Roura Grabulosa, Pere; Benyattou, T.; Guillot, G.; Moncorge, R.; Ulrici, W. |
| 12-Jun-2009 | Silicon nanocrystals as an enabling material for silicon Ppotonics | Yuan, Zhizhong; Anopchenko, Aleksei; Daldosso, Nicola; Guider, Romain; Navarro Urrios, Daniel; Pitanti, Alessandro; Spano, Rita; Pavesi, Lorenzo |
| 2002 | Semiclassical theory of shot noise in ballistic n+in+ semiconductor structures: relevance of Pauli and long range Coulomb interactions | Gomila Lluch, Gabriel; Cantalapiedra, I. R.; González, T.; Reggiani, L. (Lino), 1941- |
| 2002 | Shot noise anomalies in elastic nondegenerate diffusive conductors | Gomila Lluch, Gabriel; González, T.; Reggiani, L. (Lino), 1941- |
| 2001 | Fractional exclusion statistics and shot noise in ballistic conductors | Gomila Lluch, Gabriel; Reggiani, L. (Lino), 1941- |
| 2000 | Anomalous crossover between thermal and shot noise in macroscopic diffusive conductors | Gomila Lluch, Gabriel; Reggiani, L. (Lino), 1941- |
| 2006 | Ab initio study of NOx compounds adsorption on SnO2 surface | Prades García, Juan Daniel; Cirera Hernández, Albert; Morante i Lleonart, Joan Ramon; Pruneda, J. Miguel; Ordejón, Pablo |
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