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Issue DateTitleAuthor(s)
20-Jan-2010Towards population inversion of electrically pumped Er ions sensitized by Si nanoclustersJambois, Olivier; Gourbilleau, Fabrice; Kenyon, Anthony J.; Montserrat i Martí, Josep; Rizk, Richard; Garrido Fernández, Blas
1-Jul-1997Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layersRoura Grabulosa, Pere; Vilà i Arbonès, Anna Maria; Bosch Estrada, José; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Westwood, David I.
1992Composition modulation and inhomogeneous strain field in InxGa1-xAs/InP strained layersRoura Grabulosa, Pere; Bosch Estrada, José; Morante i Lleonart, Joan Ramon
2009Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructuresSpirkoska, D.; Arbiol i Cobos, Jordi; Gustafsson, A.; Conesa Boj, Sònia; Glas, F.; Zardo, I.; Heigoldt, M.; Gass, M. H.; Bleloch, A. L.; Estradé Albiol, Sònia; Kaniber, M.; Rossler, J.; Peiró Martínez, Francisca; Morante i Lleonart, Joan Ramon; Abstreiter, G.; Samuelson, L.; Fontcuberta i Morral, A.
2010Structural and optical properties of dilute InAsN grown by molecular beam epitaxyIbáñez i Insa, Jordi; Oliva Vidal, Robert; Mare, M. de la; Schmidbauer, M.; Hernández Márquez, Sergi; Pellegrino, Paolo; Scurr, D. J.; Cuscó i Cornet, Ramon; Artús i Surroca, Lluís; Shafi, M.; Mari, R. H.; Henini, M.; Zhuang, Q.; Godenir, A.; Krier, A.
Jul-1994Modifications in the Si valence band after ion-beam-induced oxidationAlay, Josep Lluís; Vandervorst, Wilfried