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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/124987
Simulation of STEM-HAADF image contrast of Ruddlesden-Popper faulted LaNiO<sub>3</sub> thin films
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LaNiO3 (LNO) thin films are widely used as electrode materials. Yet, their properties greatly depend on such parameters as strain state and defect density. In this work we present a detailed structural characterization of epitaxial LNO thin films grown on LaAlO3(001). Based on scanning transmission electron microscope - high-angle annular darkfield imaging (STEM-HAADF) contrast analysis and image simulations, Ruddlesden-Popper faulted configurations, with 1/2a<111> relative displacement of defect free perovskite blocks, are atomically modeled and simulated to disentangle the variation of Z-contrast in the experimental images
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COLL BENEJAM, Catalina, et al. Simulation of STEM-HAADF image contrast of Ruddlesden-Popper faulted LaNiO3 thin films. Journal of Physical Chemistry C. 2017. Vol. 121, num. 17, pags. 9300-9304. ISSN 1932-7447. [consulted: 10 of June of 2026]. Available at: https://hdl.handle.net/2445/124987