Browsing by Author Vilà i Arbonès, Anna Maria

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Issue DateTitleAuthor(s)
2014Active gating as a method to inhibit the crosstalk of Single Photon Avalanche Diodes in a shared wellVilà i Arbonès, Anna Maria; Vilella Figueras, Eva; Montiel, Andreu; Alonso Casanovas, Oscar; Diéguez Barrientos, Àngel
16-Oct-2003Anàlisi termo-mecànica d'estructures micromecanitzades per a sensors de gasPuigcorbé Punzano, Jordi
1-Jul-1997Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layersRoura Grabulosa, Pere; Vilà i Arbonès, Anna Maria; Bosch Estrada, José; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Westwood, David I.
1997Caracterización estructural de capas epitaxiadas de InGaAs/InAlAs crecidas sobre substratos (111) de InPVilà i Arbonès, Anna Maria; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
26-Nov-2014Characterization of linear-mode avalanche photodiodes in standard CMOSVilella Figueras, Eva; Vilà i Arbonès, Anna Maria; Palacio, Fernando; López de Miguel, Manuel; Diéguez Barrientos, Àngel
15-Sep-2016Comparison of the thermal decomposition processes of several aminoalcohol-based ZnO inks with one containing ethanolamineGómez Núñez, Alberto; Roura, Pere; López Martínez, Ma. Concepción; Vilà i Arbonès, Anna Maria
1-Aug-2001The complete Raman spectrum of nanometric SnO2 particlesDiéguez Barrientos, Àngel; Romano Rodríguez, Alberto; Vilà i Arbonès, Anna Maria; Morante i Lleonart, Joan Ramon
Jun-2016Construction of a ve bits analog to digital converterPolls Agell, Francesc
2005Diffraction grating couplers milled in Si3N4 rib waveguides with a focused ion beamZinoviev, K.; Domínguez, Carlos (Domínguez Horna); Vilà i Arbonès, Anna Maria
1-Jul-1994Electrical transport quantum effects in the In0.53Ga0.47As/In0.52Al0.48As heterostructure on siliconGeorgakilas, Alexander; Christou, Aris; Zekentes, Konstantinos; Mercy, J. M.; Konczewic, L. K.; Vilà i Arbonès, Anna Maria; Cornet i Calveras, Albert
2008Gallium-Indium-Zinc-Oxide-Based Thin-Film Transistors: Influence of the Source/Drain MaterialBarquinha, Pedro M. C.; Vilà i Arbonès, Anna Maria; Gonçalves, Gonçalo; Pereira, Luís M. N.; Martins, Rodrigo F. P.; Morante i Lleonart, Joan Ramon; Fortunato, Elvira M. C.
2002Gas sensing properties of catalytically modified WO3 with copper and vanadium for NH3 detectionJimenez, Ismael; Vilà i Arbonès, Anna Maria; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
28-Feb-2014Influence of In and Ga additives onto SnO2 inkjet-printed semiconductorVilà i Arbonès, Anna Maria; Gómez, A.; Portilla, L.; Morante i Lleonart, Joan Ramon
1-Jul-1993Influence of mismatch on the defects in relaxed epitaxial InGaAs/GaAs(100) films grown by molecular beam epitaxyWestwood, David I.; Woolf, D. A.; Vilà i Arbonès, Anna Maria; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
2011Low dark count geiger mode avalanche photodiodes fabricated in conventional CMOS technologiesVilella Figueras, Eva; Arbat Casas, Anna; Alonso Casanovas, Oscar; Comerma Montells, Albert; Trenado, J. (Juan); Vilà i Arbonès, Anna Maria; Casanova Mohr, Raimon; Garrido Beltrán, Lluís; Diéguez Barrientos, Àngel
Jun-2015Manufactured microlenses by polimer inkjet printingLobos Caparrós, Marcel
2000Nanocrystalline SnO2 by liquid pyrolisisCerdà Belmonte, Judith; Cirera Hernández, Albert; Vilà i Arbonès, Anna Maria; Díaz Delgado, Raül; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
8-Feb-2018On the experimental and theoretical studies of ZnO precursors: towards Green ChemistryGómez Núñez, Alberto
Sep-2014Preparation and characterization of tin (II) oxide powder as p-type semiconductor for its deposition by ink jet printingVergara Cruz, Jorge Carlos
22-Feb-2017Readout electronics for LGAD sensorsAlonso Casanovas, Oscar; Franch Masdeu, Nil; Canals Gil, Joan; Palacio Bonet, Francisco; López de Miguel, Manuel; Vilà i Arbonès, Anna Maria; Diéguez Barrientos, Àngel; Carulla, M.; Flores, D.; Hidalgo, S.; Merlos, A.; Pellegrini, G.; Quirion, D.