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| Issue Date | Title | Author(s) |
|---|---|---|
| 15-May-1995 | Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InP | Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
| 1999 | Hydrogen-induced piezoelectric effects in InP HEMT's | Blanchard, Roxann R.; Alamo, Jesús A. del; Adams, Stephen B.; Chao, P. C.; Cornet i Calveras, Albert |
| 1991 | Raman scattering and photoluminescence analysis of silicon on insulator structures obtained by single and multiple oxygen implants | Pérez Rodríguez, Alejandro; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Jiménez, J.; Hemment, Peter L. F.; Homewood, K. P. |
| 1993 | Fine speckle contrast in InGaAs/InP systems: Influence of layer thickness, missmatch, and growing temperature | Peiró Martínez, Francisca; Cornet i Calveras, Albert; Herms Berenguer, Atilà; Morante i Lleonart, Joan Ramon; Clark, S. A.; Williams, R. H. |
| 1992 | Alloy inhomogeneities in InAlAs strained layers grown by MBE | Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Clark, S. A.; Williams, R. H. |
| 1997 | Caracterización estructural de capas epitaxiadas de InGaAs/InAlAs crecidas sobre substratos (111) de InP | Vilà i Arbonès, Anna Maria; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
| 1992 | Defectes en capes epitaxials d'arseniür de gal.li sobre silici | Vilà i Arbonès, Anna Maria; Herms Berenguer, Atilà; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
| 1997 | Organización espontánea de puntos cuánticos de InSb crecidos por ALMBE sobre substratos de InP | Ferrer, J. C.; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Uztmeier, T.; Armelles Reig, G.; Briones Fernández-Pola, Fernando |
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