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Results 1-10 of 21 (Search time: 0.015 seconds).
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Issue DateTitleAuthor(s)
6-Nov-2009Optically active Er3+ ions in SiO2 codoped with Si nanoclustersNavarro Urrios, Daniel; Lebour, Youcef; Jambois, Olivier; Garrido Fernández, Blas; Pitanti, Alessandro; Daldosso, Nicola; Pavesi, Lorenzo; Cardin, J.; Hijazi, K.; Khomenkova, L.; Gourbilleau, Fabrice; Rizk, Richard
2008Ba3Yb(BO3)3 single crystals. Growth and spectroscopic characterizationSolé Vicente, Ricard, 1962-; Güell Vilà, Frank; Gavaldà, Josefina; Aguiló Díaz, Magdalena; Díaz, Francesc (Díaz González)
1-Aug-1998Electrically active point defects in n-type 4H¿SiCDoyle, J. P.; Linnarsson, M. K.; Pellegrino, Paolo; Keskitalo, N.; Svensson, Bengt G.; Schoner, A.; Nordell, N.; Lindstrom, J. L.
15-Jan-2003Vacancy and interstitial depth profiles in ion-implanted siliconLeveque, P.; Kortegaard Nielsen, H.; Pellegrino, Paolo; Hallen, A.; Svensson, Bengt G.; Kuznetsov, Andrej; Wong-Leung, J.; Jagadish, C. (Chennupati); Privitera, V.
15-Oct-1997Raman microstructural analysis of silicon-on-insulator formed by high dose oxygen ion implantation: As-implanted structuresMacía Santamaría, Javier; Martín, E.; Pérez Rodríguez, Alejandro; Jiménez, J.; Morante i Lleonart, Joan Ramon; Aspar, Bernard; Margail, Jacques
6-Oct-2006Efficient energy transfer from Si clusters to Er3+ in complex silicate glassesLebour, Youcef; Pellegrino, Paolo; García Favrot, Cristina; Moreno, J. A.; Garrido Fernández, Blas
8-Aug-2008Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-dopingFurtmayr, Florian; Vielemeyer, Martin; Stutzmann, Martin; Arbiol i Cobos, Jordi; Estradé Albiol, Sònia; Peiró Martínez, Francisca; Morante i Lleonart, Joan Ramon; Eickhoff, Martin
1-Apr-1995Spectroscopic characterization of phases formed by high-dose carbon ion implantation in siliconSerre, Christophe; Pérez Rodríguez, Alejandro; Romano Rodríguez, Albert; Morante i Lleonart, Joan Ramon; Kögler, Reinhard; Skorupa, Wolfgang
1-Aug-2001The complete Raman spectrum of nanometric SnO2 particlesDiéguez Barrientos, Àngel; Romano Rodríguez, Albert; Vilà i Arbonès, Anna Maria; Morante i Lleonart, Joan Ramon
1-Jul-1993Influence of mismatch on the defects in relaxed epitaxial InGaAs/GaAs(100) films grown by molecular beam epitaxyWestwood, David I.; Woolf, D. A.; Vilà i Arbonès, Anna Maria; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon