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Issue DateTitleAuthor(s)
1-Oct-1996Competitive evolution of the fine contrast modulation and CuPt ordering in InGaP/GaAs layersDiéguez Barrientos, Àngel; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Alsina, F.; Pascual Gainza, Jordi
15-May-1997Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopyRoura Grabulosa, Pere; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
1992Micro-Raman study of stress distribution in local isolation structures and correlation with transmission electron microscopyDe Wolf, I.; Vanhellemont, J.; Romano Rodríguez, Alberto; Norström, H.; Maes, H.E.
1991Raman scattering and photoluminescence analysis of silicon on insulator structures obtained by single and multiple oxygen implantsPérez Rodríguez, Alejandro; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Jiménez, J.; Hemment, Peter L. F.; Homewood, K. P.
1993Fine speckle contrast in InGaAs/InP systems: Influence of layer thickness, missmatch, and growing temperaturePeiró Martínez, Francisca; Cornet i Calveras, Albert; Herms Berenguer, Atilà; Morante i Lleonart, Joan Ramon; Clark, S. A.; Williams, R. H.
1992Alloy inhomogeneities in InAlAs strained layers grown by MBEPeiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Clark, S. A.; Williams, R. H.