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Issue DateTitleAuthor(s)
1998Local noise analysis of a Schottky contact: combined thermionic-emissiondiffusion theoryGomila Lluch, Gabriel; Bulashenko, Oleg; Rubí Capaceti, José Miguel
1997Relation for the nonequilibrium population of the interface states: effects on the bias dependence of the ideality factorsGomila Lluch, Gabriel; Rubí Capaceti, José Miguel
1998Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approachGomila Lluch, Gabriel; Bulashenko, Oleg; Rubí Capaceti, José Miguel; Kochelap, V. A.(Viacheslav Aleksandrovich)
1-Jul-1997Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layersRoura Grabulosa, Pere; Vilà i Arbonès, Anna Maria; Bosch Estrada, José; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Westwood, David I.
15-May-1995Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InPPeiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
1992X-ray photoelectron spectroscopy analysis of ion¿beam¿induced oxidation of GaAs and AlGaAsAlay, Josep Lluís; Vandervorst, Wilfried
Jul-1994Modifications in the Si valence band after ion-beam-induced oxidationAlay, Josep Lluís; Vandervorst, Wilfried
1992Composition modulation and inhomogeneous strain field in InxGa1-xAs/InP strained layersRoura Grabulosa, Pere; Bosch Estrada, José; Morante i Lleonart, Joan Ramon
1992Time-resolved measurements on 2T2 -> 2E photoluminescence of Ti3+ in GaPRoura Grabulosa, Pere; Benyattou, T.; Guillot, G.; Moncorge, R.; Ulrici, W.