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Enginyeria Electrònica i Biomèdica
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Issue Date
Title
Author(s)
1998
Local noise analysis of a Schottky contact: combined thermionic-emissiondiffusion theory
Gomila Lluch, Gabriel; Bulashenko, Oleg; Rubí Capaceti, José Miguel
1998
Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach
Gomila Lluch, Gabriel; Bulashenko, Oleg; Rubí Capaceti, José Miguel; Kochelap, V. A. (Viacheslav Aleksandrovich)
1997
Relation for the nonequilibrium population of the interface states: effects on the bias dependence of the ideality factors
Gomila Lluch, Gabriel; Rubí Capaceti, José Miguel
1992
Composition modulation and inhomogeneous strain field in InxGa1-xAs/InP strained layers
Roura Grabulosa, Pere; Bosch Estrada, José; Morante i Lleonart, Joan Ramon
1992
Time-resolved measurements on 2T2 -> 2E photoluminescence of Ti3+ in GaP
Roura Grabulosa, Pere; Benyattou, T.; Guillot, G.; Moncorge, R.; Ulrici, W.
1-Jul-1997
Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers
Roura Grabulosa, Pere; Vilà i Arbonès, Anna Maria; Bosch Estrada, José; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Westwood, David I.
15-May-1995
Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InP
Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
1992
X-ray photoelectron spectroscopy analysis of ion¿beam¿induced oxidation of GaAs and AlGaAs
Alay, Josep Lluís; Vandervorst, Wilfried
Jul-1994
Modifications in the Si valence band after ion-beam-induced oxidation
Alay, Josep Lluís; Vandervorst, Wilfried
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Author
3
Gomila Lluch, Gabriel
3
Morante i Lleonart, Joan Ramon
3
Roura Grabulosa, Pere
3
Rubí Capaceti, José Miguel
2
Alay, Josep Lluís
.
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Subject
3
Diodes
3
Díodes
3
Microelectronics
3
Microelectrònica
3
Optical properties
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Date issued
2
1998
2
1997
1
1995
1
1994
3
1992
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