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| Issue Date | Title | Author(s) |
|---|---|---|
| 1-Apr-1995 | Spectroscopic characterization of phases formed by high-dose carbon ion implantation in silicon | Serre, Christophe; Pérez Rodríguez, Alejandro; Romano Rodríguez, Albert; Morante i Lleonart, Joan Ramon; Kögler, Reinhard; Skorupa, Wolfgang |
| 1-Apr-1995 | Strain, alloy composition, and lattice relaxation measured by optical-absorption spectroscopy | Clark, S. A.; Roura Grabulosa, Pere; Bosch Estrada, José; Pérez Rodríguez, Alejandro; Morante i Lleonart, Joan Ramon; Westwood, David I.; Williams, R. H. |
| 15-Apr-1995 | Analysis by optical absorption and transmission electron microscopy of the strain inhomogeneities in InGaAs/InP strained layers | Roura Grabulosa, Pere; Clark, S. A.; Bosch Estrada, José; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
| 15-Jan-2002 | Influence of average size and interface passivation on the spectral emission of Si nanocrystals embedded in SiO2 | Garrido Fernández, Blas; López de Miguel, Manuel; García, C.; Pérez Rodríguez, Alejandro; Morante i Lleonart, Joan Ramon; Bonafos, Caroline; Carrada, Marzia; Claverie, Alain |
| 1-Aug-2001 | The complete Raman spectrum of nanometric SnO2 particles | Diéguez Barrientos, Àngel; Romano Rodríguez, Albert; Vilà i Arbonès, Anna Maria; Morante i Lleonart, Joan Ramon |
| 15-Feb-2004 | Surface states in template synthesized tin oxide nanoparticles | Cabot i Codina, Andreu; Arbiol i Cobos, Jordi; Ferré, R.; Morante i Lleonart, Joan Ramon; Chen, Fanglin; Liu, Meilin |
| 1-Jul-1993 | Influence of mismatch on the defects in relaxed epitaxial InGaAs/GaAs(100) films grown by molecular beam epitaxy | Westwood, David I.; Woolf, D. A.; Vilà i Arbonès, Anna Maria; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
| 15-Jul-1994 | Frequency resolved admittance spectroscopy measurements on In0.52Al0.48As/InxGa1¿xAs/In0.52Al0.48As single quantum well structures | Marsal Garví, Lluís F. (Lluís Francesc); López Villegas, José María; Bosch Estrada, José; Morante i Lleonart, Joan Ramon |
| Sep-2000 | Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia | Temple Boyer, Pierre; Jalabert, L.; Masarotto, L.; Alay, Josep Lluís; Morante i Lleonart, Joan Ramon |
| 15-May-1995 | Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InP | Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
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