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Results 1-10 of 30 (Search time: 0.041 seconds).
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Issue DateTitleAuthor(s)
1992Anomalous optical and electrical recovery process of photoquenched EL2 defect produced by oxygen and boron ion implantation in gallium arsenideSamitier i Martí, Josep; Marco Colás, Santiago; Pérez Rodríguez, Alejandro; Morante i Lleonart, Joan Ramon; Boher, P.; Renaud, M.
1991On the artificial creation of the EL2 center by means of boron implantation in gallium arsenideMorante i Lleonart, Joan Ramon; Pérez Rodríguez, Alejandro; Samitier i Martí, Josep; Romano Rodríguez, Alberto
1991Raman scattering and photoluminescence analysis of silicon on insulator structures obtained by single and multiple oxygen implantsPérez Rodríguez, Alejandro; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Jiménez, J.; Hemment, Peter L. F.; Homewood, K. P.
1993Fine speckle contrast in InGaAs/InP systems: Influence of layer thickness, missmatch, and growing temperaturePeiró Martínez, Francisca; Cornet i Calveras, Albert; Herms Berenguer, Atilà; Morante i Lleonart, Joan Ramon; Clark, S. A.; Williams, R. H.
1992Alloy inhomogeneities in InAlAs strained layers grown by MBEPeiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Clark, S. A.; Williams, R. H.
1-Apr-1997Gas collisions and pressure quenching of the photoluminescence of silicon nanopowder grown by plasma-enhanced chemical vapor depositionRoura Grabulosa, Pere; Costa i Balanzat, Josep; Morante i Lleonart, Joan Ramon; Bertrán Serra, Enric
1-Jun-1998Effects of prior hydrogenation on the structure and properties of thermally nanocrystallized silicon layersAchiq, Abdellatif; Rizk, Richard; Gourbilleau, Fabrice; Madelon, R.; Garrido Fernández, Blas; Pérez Rodríguez, Alejandro; Morante i Lleonart, Joan Ramon
15-Aug-1995Electron capture and emission by the Ti acceptor level in GaPRoura Grabulosa, Pere; Morante i Lleonart, Joan Ramon; Guillot, G.; Bremond, G.; Ulrici, W.
15-Jul-1994Frequency resolved admittance spectroscopy measurements on In0.52Al0.48As/InxGa1¿xAs/In0.52Al0.48As single quantum well structuresMarsal Garví, Lluís F. (Lluís Francesc); López Villegas, José María; Bosch Estrada, José; Morante i Lleonart, Joan Ramon
1-Jul-1997Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layersRoura Grabulosa, Pere; Vilà i Arbonès, Anna Maria; Bosch Estrada, José; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Westwood, David I.