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Issue DateTitleAuthor(s)
15-Aug-1995Electron capture and emission by the Ti acceptor level in GaPRoura Grabulosa, Pere; Morante i Lleonart, Joan Ramon; Guillot, G.; Bremond, G.; Ulrici, W.
1-Apr-1997Gas collisions and pressure quenching of the photoluminescence of silicon nanopowder grown by plasma-enhanced chemical vapor depositionRoura Grabulosa, Pere; Costa i Balanzat, Josep; Morante i Lleonart, Joan Ramon; Bertrán Serra, Enric
1-Jul-1997Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layersRoura Grabulosa, Pere; Vilà i Arbonès, Anna Maria; Bosch Estrada, José; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Westwood, David I.
15-May-1997Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopyRoura Grabulosa, Pere; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
1-Apr-1995Strain, alloy composition, and lattice relaxation measured by optical-absorption spectroscopyClark, S. A.; Roura Grabulosa, Pere; Bosch Estrada, José; Pérez Rodríguez, Alejandro; Morante i Lleonart, Joan Ramon; Westwood, David I.; Williams, R. H.
15-Apr-1995Analysis by optical absorption and transmission electron microscopy of the strain inhomogeneities in InGaAs/InP strained layersRoura Grabulosa, Pere; Clark, S. A.; Bosch Estrada, José; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
1992Composition modulation and inhomogeneous strain field in InxGa1-xAs/InP strained layersRoura Grabulosa, Pere; Bosch Estrada, José; Morante i Lleonart, Joan Ramon
1992Time-resolved measurements on 2T2 -> 2E photoluminescence of Ti3+ in GaPRoura Grabulosa, Pere; Benyattou, T.; Guillot, G.; Moncorge, R.; Ulrici, W.