Browsing by Author Roca i Cabarrocas, P. (Pere)

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 13 of 13
Issue DateTitleAuthor(s)
2005Anomalous crystallization of hydrogenated amorphous silicon during fast heating rampsFarjas Silva, Jordi; Serra-Miralles, J.; Roura Grabulosa, Pere; Bertrán Serra, Enric; Roca i Cabarrocas, P. (Pere)
15-Oct-2002Atomic structure of the nanocrystalline Si particles appearing in nanostructured Si thin films produced in low-temperature radiofrequency plasmasViera Mármol, Gregorio; Mikikian, M.; Bertrán Serra, Enric; Roca i Cabarrocas, P. (Pere); Boufendi, L.
2006Calorimetry of dehydrogenation and dangling-bond recombination in several hydrogenated amorphous silicon materialsRoura Grabulosa, Pere; Farjas Silva, Jordi; Rath, Chandana; Serra-Miralles, J.; Bertrán Serra, Enric; Roca i Cabarrocas, P. (Pere)
1998Effect of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by rf glow dischargeBertrán Serra, Enric; Sharma, S. N.; Viera Mármol, Gregorio; Costa i Balanzat, Josep; St'ahel, P.; Roca i Cabarrocas, P. (Pere)
Jul-1997A fully automated hot-wall multiplasma-monochamber reactor for thin film depositionRoca i Cabarrocas, P. (Pere); Chevrier, J. B.; Huc, J.; Lloret, A.; Parey, J. Y.; Schmitt, J. P. M.
2008Influence of the (111) twinning on the formation of diamond cubic/diamond hexagonal heterostructures in Cu-catalyzed Si nanowiresArbiol i Cobos, Jordi; Fontcuberta i Morral, A.; Estradé Albiol, Sònia; Peiró Martínez, Francisca; Kalache, Billel; Roca i Cabarrocas, P. (Pere); Morante i Lleonart, Joan Ramon
8-Dec-2008Low temperature back-surface-field contacts deposited by Hot-wire CVD for heterojunction solar cellsMuñoz Ramos, David; Voz Sánchez, Cristóbal; Martin Garcia, Isidro; Orpella, Albert; Alcubilla González, Ramón; Villar, Fernando; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi; Roca i Cabarrocas, P. (Pere)
1996New features of the layer-by-layer deposition of microcrystalline silicon films revealed by spectroscopic ellipsometry and high resolution transmission electron microscopyRoca i Cabarrocas, P. (Pere); Hamma, S.; Hadjadj, A.; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi
2008Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200°CMuñoz Ramos, David; Voz Sánchez, Cristóbal; Martin Garcia, Isidro; Orpella, Albert; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Villar, Fernando; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi; Damon-Lacoste, J.; Roca i Cabarrocas, P. (Pere)
2010Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experimentsKail, F.; Farjas Silva, Jordi; Roura Grabulosa, Pere; Secouard, C.; Nos Aguilà, Oriol; Bertomeu i Balagueró, Joan; Alzina Sureda, Francesc; Roca i Cabarrocas, P. (Pere)
19-Sep-2011The configurational energy gap between amorphous and crystalline siliconKail, F.; Farjas Silva, Jordi; Roura Grabulosa, Pere; Secouard, C.; Nos Aguilà, Oriol; Bertomeu i Balagueró, Joan; Roca i Cabarrocas, P. (Pere)
2000The role of hydrogen in the formation of microcrystalline siliconFontcuberta i Morral, A.; Bertomeu i Balagueró, Joan; Roca i Cabarrocas, P. (Pere)
2005Thermally-Induced Structural Transformations on Polymorphous SiliconRath, Chandana; Farjas Silva, Jordi; Roura Grabulosa, Pere; Kail, F.; Roca i Cabarrocas, P. (Pere); Bertrán Serra, Enric