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| Issue Date | Title | Author(s) |
|---|---|---|
| 1998 | Strain-induced quenching of optical transitions in capped self-assembled quantum dot structures | Prieto, J. A.; Armelles Reig, G.; Utzmeier, Thomas; Briones Fernández-Pola, Fernando; Ferrer, J. C.; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
| 1-Jun-1998 | Effects of prior hydrogenation on the structure and properties of thermally nanocrystallized silicon layers | Achiq, Abdellatif; Rizk, Richard; Gourbilleau, Fabrice; Madelon, R.; Garrido Fernández, Blas; Pérez Rodríguez, Alejandro; Morante i Lleonart, Joan Ramon |
| 1-Oct-1996 | Competitive evolution of the fine contrast modulation and CuPt ordering in InGaP/GaAs layers | Diéguez Barrientos, Àngel; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Alsina, F.; Pascual Gainza, Jordi |
| 15-Jun-1998 | Surface roughness in InGaAs Channels of HEMT devices depending on the growth temperature: strain induced or due to alloy decomposition | Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Beck, M.; Py, M. A. |
| 15-Aug-1995 | Electron capture and emission by the Ti acceptor level in GaP | Roura Grabulosa, Pere; Morante i Lleonart, Joan Ramon; Guillot, G.; Bremond, G.; Ulrici, W. |
| 1-May-1996 | Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization | Serre, Christophe; Calvo Barrio, Lorenzo; Pérez Rodríguez, Alejandro; Romano Rodríguez, Albert; Morante i Lleonart, Joan Ramon; Pacaud, Y.; Kögler, Reinhard; Heera, Viton; Skorupa, Wolfgang |
| 15-Feb-1997 | Analysis of geometrical effects on the behavior of transverse and longitudinal modes of amorphous silicon compounds | Moreno, J. A.; Garrido Fernández, Blas; Samitier i Martí, Josep; Morante i Lleonart, Joan Ramon |
| 1-Jul-1997 | Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers | Roura Grabulosa, Pere; Vilà i Arbonès, Anna Maria; Bosch Estrada, José; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Westwood, David I. |
| 15-Oct-1997 | Raman microstructural analysis of silicon-on-insulator formed by high dose oxygen ion implantation: As-implanted structures | Macía Santamaría, Javier; Martín, E.; Pérez Rodríguez, Alejandro; Jiménez, J.; Morante i Lleonart, Joan Ramon; Aspar, Bernard; Margail, Jacques |
| 15-May-1997 | Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy | Roura Grabulosa, Pere; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
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