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| Issue Date | Title | Author(s) |
|---|---|---|
| 1998 | Strain-induced quenching of optical transitions in capped self-assembled quantum dot structures | Prieto, J. A.; Armelles Reig, G.; Utzmeier, Thomas; Briones Fernández-Pola, Fernando; Ferrer, J. C.; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
| 1-Oct-1996 | Competitive evolution of the fine contrast modulation and CuPt ordering in InGaP/GaAs layers | Diéguez Barrientos, Àngel; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Alsina, F.; Pascual Gainza, Jordi |
| 15-Jun-1998 | Surface roughness in InGaAs Channels of HEMT devices depending on the growth temperature: strain induced or due to alloy decomposition | Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Beck, M.; Py, M. A. |
| 15-Jul-2002 | Effects of Nb doping on the TiO2 anatase-to-rutile phase transition | Arbiol i Cobos, Jordi; Cerdà Belmonte, Judith; Dezanneau, Guilhem; Cirera Hernández, Albert; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
| 2008 | Influence of the (111) twinning on the formation of diamond cubic/diamond hexagonal heterostructures in Cu-catalyzed Si nanowires | Arbiol i Cobos, Jordi; Fontcuberta i Morral, A.; Estradé Albiol, Sònia; Peiró Martínez, Francisca; Kalache, Billel; Roca i Cabarrocas, P. (Pere); Morante i Lleonart, Joan Ramon |
| 8-Aug-2008 | Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping | Furtmayr, Florian; Vielemeyer, Martin; Stutzmann, Martin; Arbiol i Cobos, Jordi; Estradé Albiol, Sònia; Peiró Martínez, Francisca; Morante i Lleonart, Joan Ramon; Eickhoff, Martin |
| 15-Apr-1995 | Analysis by optical absorption and transmission electron microscopy of the strain inhomogeneities in InGaAs/InP strained layers | Roura Grabulosa, Pere; Clark, S. A.; Bosch Estrada, José; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
| 15-May-1995 | Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InP | Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
| 1993 | Fine speckle contrast in InGaAs/InP systems: Influence of layer thickness, missmatch, and growing temperature | Peiró Martínez, Francisca; Cornet i Calveras, Albert; Herms Berenguer, Atilà; Morante i Lleonart, Joan Ramon; Clark, S. A.; Williams, R. H. |
| 1992 | Alloy inhomogeneities in InAlAs strained layers grown by MBE | Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Clark, S. A.; Williams, R. H. |
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