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Results 1-10 of 17 (Search time: 0.008 seconds).
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Issue DateTitleAuthor(s)
1998Strain-induced quenching of optical transitions in capped self-assembled quantum dot structuresPrieto, J. A.; Armelles Reig, G.; Utzmeier, Thomas; Briones Fernández-Pola, Fernando; Ferrer, J. C.; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
15-Jun-1998Surface roughness in InGaAs Channels of HEMT devices depending on the growth temperature: strain induced or due to alloy decompositionPeiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Beck, M.; Py, M. A.
1-Oct-1996Competitive evolution of the fine contrast modulation and CuPt ordering in InGaP/GaAs layersDiéguez Barrientos, Àngel; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Alsina, F.; Pascual Gainza, Jordi
1-Jul-1997Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layersRoura Grabulosa, Pere; Vilà i Arbonès, Anna Maria; Bosch Estrada, José; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Westwood, David I.
15-May-1997Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopyRoura Grabulosa, Pere; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
1-May-1997Raman scattering of InSb quantum dots grown on InP substratesArmelles Reig, G.; Utzmeier, Thomas; Postigo Resa, Pablo Aitor; Briones Fernández-Pola, Fernando; Ferrer, J. C.; Peiró Martínez, Francisca; Cornet i Calveras, Albert
15-May-1995Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InPPeiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
1-Jul-1993Influence of mismatch on the defects in relaxed epitaxial InGaAs/GaAs(100) films grown by molecular beam epitaxyWestwood, David I.; Woolf, D. A.; Vilà i Arbonès, Anna Maria; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
1-Jul-1994Electrical transport quantum effects in the In0.53Ga0.47As/In0.52Al0.48As heterostructure on siliconGeorgakilas, Alexander; Christou, Aris; Zekentes, Konstantinos; Mercy, J. M.; Konczewic, L. K.; Vilà i Arbonès, Anna Maria; Cornet i Calveras, Albert
15-Apr-1995Analysis by optical absorption and transmission electron microscopy of the strain inhomogeneities in InGaAs/InP strained layersRoura Grabulosa, Pere; Clark, S. A.; Bosch Estrada, José; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon