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Issue Date | Title | Author(s) |
---|---|---|
1998 | Strain-induced quenching of optical transitions in capped self-assembled quantum dot structures | Prieto, J. A.; Armelles Reig, G.; Utzmeier, Thomas; Briones Fernández-Pola, Fernando; Ferrer, J. C.; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
1-Oct-1996 | Competitive evolution of the fine contrast modulation and CuPt ordering in InGaP/GaAs layers | Diéguez Barrientos, Àngel; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Alsina, F.; Pascual Gainza, Jordi |
15-Jun-1998 | Surface roughness in InGaAs Channels of HEMT devices depending on the growth temperature: strain induced or due to alloy decomposition | Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Beck, M.; Py, M. A. |
1-Jul-1997 | Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers | Roura Grabulosa, Pere; Vilà i Arbonès, Anna Maria; Bosch Estrada, José; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Westwood, David I. |
15-May-1997 | Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy | Roura Grabulosa, Pere; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
1-May-1997 | Raman scattering of InSb quantum dots grown on InP substrates | Armelles Reig, G.; Utzmeier, Thomas; Postigo Resa, Pablo Aitor; Briones Fernández-Pola, Fernando; Ferrer, J. C.; Peiró Martínez, Francisca; Cornet i Calveras, Albert |
15-Jan-1996 | Structure of 60° dislocations at the GaAs/Si interface | Vilà i Arbonès, Anna Maria; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Ruterana, Pierre; Loubradou, Marc; Bonnet, Roland |
1-Jul-1994 | Electrical transport quantum effects in the In0.53Ga0.47As/In0.52Al0.48As heterostructure on silicon | Georgakilas, Alexander; Christou, Aris; Zekentes, Konstantinos; Mercy, J. M.; Konczewic, L. K.; Vilà i Arbonès, Anna Maria; Cornet i Calveras, Albert |
15-Apr-1995 | Analysis by optical absorption and transmission electron microscopy of the strain inhomogeneities in InGaAs/InP strained layers | Roura Grabulosa, Pere; Clark, S. A.; Bosch Estrada, José; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
1-Jul-1993 | Influence of mismatch on the defects in relaxed epitaxial InGaAs/GaAs(100) films grown by molecular beam epitaxy | Westwood, David I.; Woolf, D. A.; Vilà i Arbonès, Anna Maria; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
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