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Issue Date | Title | Author(s) |
---|---|---|
15-Feb-1997 | Analysis of geometrical effects on the behavior of transverse and longitudinal modes of amorphous silicon compounds | Moreno, J. A.; Garrido Fernández, Blas; Samitier i Martí, Josep; Morante i Lleonart, Joan Ramon |
1-Jul-1997 | Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers | Roura Grabulosa, Pere; Vilà i Arbonès, Anna Maria; Bosch Estrada, José; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Westwood, David I. |
15-Oct-1997 | Raman microstructural analysis of silicon-on-insulator formed by high dose oxygen ion implantation: As-implanted structures | Macía Santamaría, Javier; Martín, E.; Pérez Rodríguez, Alejandro; Jiménez, J.; Morante i Lleonart, Joan Ramon; Aspar, Bernard; Margail, Jacques |
15-May-1997 | Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy | Roura Grabulosa, Pere; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
2008 | Influence of the (111) twinning on the formation of diamond cubic/diamond hexagonal heterostructures in Cu-catalyzed Si nanowires | Arbiol i Cobos, Jordi; Fontcuberta i Morral, A.; Estradé Albiol, Sònia; Peiró Martínez, Francisca; Kalache, Billel; Roca i Cabarrocas, P. (Pere); Morante i Lleonart, Joan Ramon |
1-Jul-2003 | White luminescence from Si+ and C+ ion-implanted SiO2 films | Pérez Rodríguez, Alejandro; González Varona, Olga; Garrido Fernández, Blas; Pellegrino, Paolo; Morante i Lleonart, Joan Ramon |
22-May-2007 | Raman microprobe characterization of electrodeposited S-rich CuIn(S,Se)2 for photovoltaic applications: Microstructural analysis | Izquierdo Roca, Victor; Pérez Rodríguez, Alejandro; Romano Rodríguez, Albert; Morante i Lleonart, Joan Ramon; Álvarez García, Jacobo; Calvo Barrio, Lorenzo; Bermudez, V.; Grand, P. P.; Ramdani, O.; Parissi, L.; Kerrec, O. |
8-Aug-2008 | Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping | Furtmayr, Florian; Vielemeyer, Martin; Stutzmann, Martin; Arbiol i Cobos, Jordi; Estradé Albiol, Sònia; Peiró Martínez, Francisca; Morante i Lleonart, Joan Ramon; Eickhoff, Martin |
15-Jan-1996 | Structure of 60° dislocations at the GaAs/Si interface | Vilà i Arbonès, Anna Maria; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Ruterana, Pierre; Loubradou, Marc; Bonnet, Roland |
15-Nov-1996 | Effect of stress and composition on the Raman spectra of etch-stop SiGeB layers | Pérez Rodríguez, Alejandro; Romano Rodríguez, Albert; Cabezas, R.; Morante i Lleonart, Joan Ramon; Jawhari, Tariq; Hunt, Charles E. |
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