Browsing by Author Bertomeu i Balagueró, Joan

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Issue DateTitleAuthor(s)
10-Feb-2023Impact of the RF Power on the Copper Nitride Films Deposited in a Pure Nitrogen Environment for Applications as Eco-Friendly Solar AbsorberRodríguez-Tapiador, María Isabel; Merino, Jesús; Jawhari, Tariq; Muñoz Rosas, A. L.; Bertomeu i Balagueró, Joan; Fernández, Susana
2-Nov-2018Influence of a gold seed in transparent V<sub>2</sub>O<sub>x</sub>/Ag/V<sub>2</sub>O<sub>x</sub> selective contacts for dopant-free silicon solar cellsNguyen, Hieu Trung; Ros Costals, Eloi; Tom, Thomas; Bertomeu i Balagueró, Joan; Asensi López, José Miguel; Andreu i Batallé, Jordi; Martin Garcia, Isidro; Ortega Villasclaras, Pablo Rafael; Garin Escriva, Moises; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Alcubilla González, Ramón
31-Oct-2020Influence of Co-Sputtered Ag:Al Ultra-Thin Layers in Transparent V2O5/Ag:Al/AZO Hole-Selective Electrodes for Silicon Solar CellsTom, Thomas; López-Pintó, Nicolau; Asensi López, José Miguel; Andreu i Batallé, Jordi; Bertomeu i Balagueró, Joan; Ros Costals, Eloi; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal
2010Influence of RF power on the properties of sputtered ZnO:Al thin filmsAntony, Aldrin; Carreras Seguí, Paz; Keitzl, Thomas; Roldán Molinero, Rubén; Nos Aguilà, Oriol; Frigeri, Paolo Antonio; Asensi López, José Miguel; Bertomeu i Balagueró, Joan
1997Infrared characterization of a-Si:H/a-Si1-xCx:H interfacesBertomeu i Balagueró, Joan; Puigdollers i González, Joaquim; Asensi López, José Miguel; Andreu i Batallé, Jordi
1999Investigation of defect formation and electronic transport in microcrystalline silicon deposited by hot-wire CVDStöger, M.; Breymesser, A.; Schlosser, V.; Ramadori, M.; Plunger, V.; Peiró, D.; Voz Sánchez, Cristóbal; Bertomeu i Balagueró, Joan; Nelhiebel, M.; Schattschneider, P.; Andreu i Batallé, Jordi
9-Jan-2017Investigation on the structural changes of ZnO:Er:Yb thin film during laser annealing to fabricate a transparent conducting upconverterLluscà Jané, Marta; López Vidrier, Julià; Lauzurica, Sara; Canteli, David; Sánchez-Aniorte, María I.; Molpeceres, Carlos; Antony, Aldrin; Hernández Márquez, Sergi; Alcobé i Ollé, Xavier; Garrido Fernández, Blas; Bertomeu i Balagueró, Joan
2001Investigations on doping of amorphous and nano-crystalline silicon films deposited by catalytic chemical vapour depositionFonrodona Turon, Marta; Soler Vilamitjana, David; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi
2001Kelvin probe measurements of microcrystalline silicon on a nanometer scale using SFMBreymesser, A.; Schlosser, V.; Peiró, D.; Voz Sánchez, Cristóbal; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi; Summhammer, J.
27-Sep-2006Laboratori d'electricitat i òpticaBertomeu i Balagueró, Joan
27-Sep-2006Laboratori física IIBertomeu i Balagueró, Joan; Universitat de Barcelona. Departament de Física Aplicada i Electrònica
1992Light induced defects in thermal annealed hydrogenated amorphous siliconSerra-Miralles, J.; Bertomeu i Balagueró, Joan; Sardin, Georges; Roch i Cunill, Carles; Asensi López, José Miguel; Andreu i Batallé, Jordi; Morenza Gil, José Luis
31-Mar-2015Low cost vacuum web coating systemMorrone, Luigi; Frigeri, Paolo Antonio; Bertomeu i Balagueró, Joan
2006Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrateFonrodona Turon, Marta; Soler Vilamitjana, David; Escarré i Palou, Jordi; Villar, Fernando; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi; Saboundji, A.; Coulon, N.; Mohammed-Brahim, T.
8-Dec-2008Low temperature back-surface-field contacts deposited by Hot-wire CVD for heterojunction solar cellsMuñoz Ramos, David; Voz Sánchez, Cristóbal; Martin Garcia, Isidro; Orpella, Albert; Alcubilla González, Ramón; Villar, Fernando; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi; Roca i Cabarrocas, P. (Pere)
30-Nov-2016Main properties of Al2O3 thin films deposited by magnetron sputtering of an Al2O3 ceramic target at different radio-frequency power and argon pressure and their passivation effect on p-type c-Si wafersGarcía-Valenzuela, Jorge A.; Rivera, R.; Morales-Vilches, A. B.; Gerling-Sarabia, L. G.; Caballero, A.; Asensi López, José Miguel; Voz Sánchez, Cristóbal; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi
2005Micro- and nanostructuring of poly(ethylene-2,6-naphthalate) surfaces, for biomedical applications, using polymer replication techniquesMills, C. A.; Escarré i Palou, Jordi; Engel, Elisabeth; Martinez, E.; Errachid, Abdelhamid; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi; Planell, J. A. (Josep Anton); Samitier i Martí, Josep
2000Microcrystalline silicon thin film transistors obtained by Hot-Wire CVDPuigdollers i González, Joaquim; Orpella, Albert; Alcubilla González, Ramón; Dosev, D.; Pallarés Curto, Jordi; Peiró, D.; Voz Sánchez, Cristóbal; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi; Marsal Garví, Lluís F. (Lluís Francesc)
2000Microdoping compensation of microcrystalline silicon obtained by Hot-Wire Chemical Vapour DepositionVoz Sánchez, Cristóbal; Peiró, D.; Fonrodona Turon, Marta; Soler Vilamitjana, David; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi
Nov-2018Modulation of argon pressure as an option to control transmittance and resistivity of ZnO:Al films deposited by DC magnetron sputtering: on the dark yellow films at 10<sup>-7</sup> Torr base pressuresGarcía-Valenzuela, Jorge A.; Cabrera-German, D.; Cota-Leal, M.; Suárez-Campos, G.; Martínez-Gil, M.; Romo-García, F.; Baez-Gaxiola, R.; Sotelo-Lerma, M.; Andreu i Batallé, Jordi; Bertomeu i Balagueró, Joan