Browsing by Author Morante i Lleonart, Joan Ramon

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Issue DateTitleAuthor(s)
2006Ab initio study of NOx compounds adsorption on SnO2 surfacePrades García, Juan Daniel; Cirera Hernández, Albert; Morante i Lleonart, Joan Ramon; Pruneda, J. Miguel; Ordejón, Pablo
30-Oct-2019Adaptation of Cu(In, Ga)Se2 photovoltaics for full unbiased photocharge of integrated solar vanadium redox flow batteriesMurcia López, Sebastián; Chakraborty, Monalisa; Carretero, Nina M.; Flox, Cristina; Morante i Lleonart, Joan Ramon; Andreu Arbella, Teresa
1992Alloy inhomogeneities in InAlAs strained layers grown by MBEPeiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Clark, S. A.; Williams, R. H.
15-Apr-1995Analysis by optical absorption and transmission electron microscopy of the strain inhomogeneities in InGaAs/InP strained layersRoura Grabulosa, Pere; Clark, S. A.; Bosch Estrada, José; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
15-Feb-1997Analysis of geometrical effects on the behavior of transverse and longitudinal modes of amorphous silicon compoundsMoreno, J. A.; Garrido Fernández, Blas; Samitier i Martí, Josep; Morante i Lleonart, Joan Ramon
23-Jun-2008Analysis of S-rich CuIn(S,Se)2 layers for photovoltaic applications: Influence of the sulfurization temperature on the crystalline properties of electrodeposited and sulfurized CuInSe2 precursorsIzquierdo Roca, Victor; Pérez Rodríguez, Alejandro; Morante i Lleonart, Joan Ramon; Álvarez García, Jacobo; Calvo Barrio, Lorenzo; Bermudez, V.; Grand, P. P.; Parissi, L.; Broussillon, C.; Kerrec, O.
1986Analysis of the near-intrinsic and extrinsic photocapacitance due to the EL2 level in boron implanted GaAsMorante i Lleonart, Joan Ramon; Samitier i Martí, Josep; Pérez Rodríguez, Alejandro; Altelarrea Soria, Hermenegildo; Gourrier, S.
16-Oct-2003Anàlisi termo-mecànica d'estructures micromecanitzades per a sensors de gasPuigcorbé Punzano, Jordi
23-Jun-2000Análisis dinámico de atmósferas con matrices de sensores mediante procesado de señal no-linealPardo Martínez, Antonio
1992Anomalous optical and electrical recovery process of photoquenched EL2 defect produced by oxygen and boron ion implantation in gallium arsenideSamitier i Martí, Josep; Marco Colás, Santiago; Pérez Rodríguez, Alejandro; Morante i Lleonart, Joan Ramon; Boher, P.; Renaud, M.
1-Jul-1997Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layersRoura Grabulosa, Pere; Vilà i Arbonès, Anna Maria; Bosch Estrada, José; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Westwood, David I.
24-Sep-2020Au-Manganese Oxide Nanostructures by a Plasma-Assisted Process as Electrocatalysts for Oxygen Evolution: A Chemico-Physical InvestigationBigiani, Lorenzo; Gasparotto, Alberto; Andreu Arbella, Teresa; Verbeeck, Johan; Sada, Cinzia; Modin, Evgeny; Levedev, Oleg I.; Morante i Lleonart, Joan Ramon; Barreca, Davide; Maccato, Chiara
1997Caracterización estructural de capas epitaxiadas de InGaAs/InAlAs crecidas sobre substratos (111) de InPVilà i Arbonès, Anna Maria; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
2004Catalytic gates for gas sensors based on SiC technologyCasals Guillén, Olga; Haffar, M.; Barcones Campo, Beatriz; Romano Rodríguez, Albert; Serre, Christophe; Pérez Rodríguez, Alejandro; Morante i Lleonart, Joan Ramon; Godignon, Philippe; Montserrat i Martí, Josep; Millan, J.
2007Characterization of the electrical properties of individual tin-oxide nanowires contacted to platinum nanoelectrodesHernández Ramírez, Francisco; Tarancón Rubio, Albert; Casals Guillén, Olga; Pellicer Vilà, Eva M.; Rodríguez, J.; Romano Rodríguez, Albert; Morante i Lleonart, Joan Ramon; Barth, S.; Mathur, Sanjay
1-Oct-1996Competitive evolution of the fine contrast modulation and CuPt ordering in InGaP/GaAs layersDiéguez Barrientos, Àngel; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Alsina, F.; Pascual Gainza, Jordi
1-Aug-2001The complete Raman spectrum of nanometric SnO2 particlesDiéguez Barrientos, Àngel; Romano Rodríguez, Albert; Vilà i Arbonès, Anna Maria; Morante i Lleonart, Joan Ramon
1992Composition modulation and inhomogeneous strain field in InxGa1-xAs/InP strained layersRoura Grabulosa, Pere; Bosch Estrada, José; Morante i Lleonart, Joan Ramon
1994Configurational statistical model for the damaged structure of silicon oxide after ion implantationGarrido Beltrán, Lluís; Samitier i Martí, Josep; Morante i Lleonart, Joan Ramon; Montserrat i Martí, Josep; Domínguez, Carlos (Domínguez Horna)
31-Aug-2014Copper (II) oxide nanowires for p-type conductometric NH3 sensingShao, F.; Hernández Ramírez, Francisco; Prades García, Juan Daniel; Fàbrega i Claveria, Ma. Carme; Andreu Arbella, Teresa; Morante i Lleonart, Joan Ramon