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| Issue Date | Title | Author(s) |
|---|---|---|
| 1999 | Investigation of defect formation and electronic transport in microcrystalline silicon deposited by hot-wire CVD | Stöger, M.; Breymesser, A.; Schlosser, V.; Ramadori, M.; Plunger, V.; Peiró, D.; Voz Sánchez, Cristóbal; Bertomeu i Balagueró, Joan; Nelhiebel, M.; Schattschneider, P.; Andreu i Batallé, Jordi |
| 2001 | Optoelectronic studies in nanocrystalline silicon Schottky diodes obtained by Hot-Wire Chemical Vapour Deposition | Voz Sánchez, Cristóbal; Soler Vilamitjana, David; Fonrodona Turon, Marta; Bertomeu i Balagueró, Joan; Asensi López, José Miguel; Andreu i Batallé, Jordi |
| 2000 | Microcrystalline silicon thin film transistors obtained by Hot-Wire CVD | Puigdollers i González, Joaquim; Orpella, Albert; Alcubilla González, Ramón; Dosev, D.; Pallarés Curto, Jordi; Peiró, D.; Voz Sánchez, Cristóbal; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi; Marsal Garví, Lluís F. (Lluís Francesc) |
| 2006 | Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD | Fonrodona Turon, Marta; Soler Vilamitjana, David; Villar, Fernando; Escarré i Palou, Jordi; Asensi López, José Miguel; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi |
| 1996 | Study of post-deposition contamination in low-temperature deposited polysilicon films | Bertomeu i Balagueró, Joan; Puigdollers i González, Joaquim; Peiró, D.; Cifre, J.; Delgado Nieto, Juan Carlos; Andreu i Batallé, Jordi |
| 2000 | Microdoping compensation of microcrystalline silicon obtained by Hot-Wire Chemical Vapour Deposition | Voz Sánchez, Cristóbal; Peiró, D.; Fonrodona Turon, Marta; Soler Vilamitjana, David; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi |
| 2004 | Control of doped layers in p-i-n microcrystalline solar cells fully deposited with HWCVD | Fonrodona Turon, Marta; Soler Vilamitjana, David; Escarré i Palou, Jordi; Asensi López, José Miguel; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi |
| 2008 | Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200°C | Muñoz Ramos, David; Voz Sánchez, Cristóbal; Martin Garcia, Isidro; Orpella, Albert; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Villar, Fernando; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi; Damon-Lacoste, J.; Roca i Cabarrocas, P. (Pere) |
| 1993 | Structure of a-Si:H/a-Si1-xCx:H multilayers deposited in a reactor with automated substrate holder | Bertomeu i Balagueró, Joan; Asensi López, José Miguel; Puigdollers i González, Joaquim; Andreu i Batallé, Jordi; Morenza Gil, José Luis |
| 2002 | Studies on grain boundaries in nanocrystalline silicon grown by Hot-Wire CVD | Fonrodona Turon, Marta; Soler Vilamitjana, David; Asensi López, José Miguel; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi |
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